ELEMENT-SPECIFIC BROADENING EFFECTS IN SIMS DEPTH PROFILING OF LIGHT IMPURITIES IMPLANTED IN SILICON

被引：30

作者：

WACH, W ^{[1
]}

WITTMAACK, K ^{[1
]}

机构：

[1] GESELL STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER

来源：

SURFACE AND INTERFACE ANALYSIS | 1982年 / 4卷 / 06期

关键词：

D O I：

10.1002/sia.740040603

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：230 / 233

页数：4

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