EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .1. PROFILE MEASUREMENTS AND CALCULATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 1 - 6

[3] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[4] Hofker W. K., 1973, ION IMPLANTATION SEM, P133

[5] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342

[6] CORRECTION OF DISTORTIONS IN SPECTRAL-LINE PROFILES - APPLICATIONS TO ELECTRON SPECTROSCOPIES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3071 - 3082

[7] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 660 - 663

[8] Makh S. S., 1980, Surface and Interface Analysis, V2, P115, DOI 10.1002/sia.740020307

[9] ION-BEAM SPUTTERING - EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04): : 209 - 215

[10] Z1 OSCILLATIONS IN LOW-ENERGY HEAVY-ION RANGES [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 178 (2-3): : 517 - 522

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .1. PROFILE MEASUREMENTS AND CALCULATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 1 - 6

[3] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[4] Hofker W. K., 1973, ION IMPLANTATION SEM, P133

[5] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342

[6] CORRECTION OF DISTORTIONS IN SPECTRAL-LINE PROFILES - APPLICATIONS TO ELECTRON SPECTROSCOPIES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3071 - 3082

[7] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 660 - 663

[8] Makh S. S., 1980, Surface and Interface Analysis, V2, P115, DOI 10.1002/sia.740020307

[9] ION-BEAM SPUTTERING - EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04): : 209 - 215

[10] Z1 OSCILLATIONS IN LOW-ENERGY HEAVY-ION RANGES [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 178 (2-3): : 517 - 522