NONALLOYED OHMIC CONTACTS TO SI-IMPLANTED GAAS ACTIVATED USING SIOXNY CAPPED INFRARED RAPID THERMAL ANNEALING

被引：17

作者：

KUZUHARA, M ^{[1
]}

NOZAKI, T ^{[1
]}

KOHZU, H ^{[1
]}

机构：

[1] NEC CORP, DIV LSI 2, NAKAHARA KU, KAWASAKI 211, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.336138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1204 / 1209

页数：6

共 21 条

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[9] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS [J].

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KOHZU, H .

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