EPITAXIAL-GROWTH OF C40 STRUCTURE SILICIDES ON (111)SI

被引：3

作者：

CHENG, HC ^{[1
]}

LIN, WT ^{[1
]}

CHIEN, CJ ^{[1
]}

SHIAU, FY ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV, CTR MAT SCI, HSINCHU 300, TAIWAN

来源：

APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期

关键词：

D O I：

10.1016/0378-5963(85)90183-7

中图分类号：

学科分类号：

摘要：

引用

页码：512 / 519

页数：8

共 20 条

[1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].

BUCKLEY, WD ;

MOSS, SC .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&

[2] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF ION-BEAM INDUCED INTERFACIAL REACTIONS IN MOLYBDENUM THIN-FILMS ON SILICON [J].

CHEN, LJ ;

HUNG, LS ;

MAYER, JW .

APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :202-208

[3] EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON [J].

CHEN, LJ ;

CHANG, TT .

THIN SOLID FILMS, 1983, 104 (1-2) :183-189

[4]

CHEN MS, 1984, MOL PHARMACOL, V25, P441

[5]

CHENG HY, UNPUB, P5019

[6]

DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[7]

ELABD H, 1982, RCA REV, V43, P569

[8]

FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[9]

FURUKAWA S, 1983, JAPAN J APPL PH S221, V22, P21

[10] NISI2-SI INFRARED SCHOTTKY PHOTODETECTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

HARRISON, TR ;

JOHNSON, AM ;

TIEN, PK ;

DAYEM, AH .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :734-736

← 1 2 →