LOW-FREQUENCY ADMITTANCE MEASUREMENTS ON THE HGCDTE/PHOTOX SIO2 INTERFACE

被引：17

作者：

TSAU, GH

SHER, A

MADOU, M

WILSON, JA

COTTON, VA

JONES, CE

机构：

[1] SRI INT, MENLO PK, CA 94025 USA

[2] SANTA BARBARA RES CTR, GOLETA, CA 93117 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.336511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1238 / 1244

页数：7

共 16 条

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