DETERMINATION OF A BI-INDUCED (1X1) STRUCTURE OF THE SI(100) SURFACE

被引：14

作者：

FAN, WC ^{[1
]}

WU, NJ ^{[1
]}

IGNATIEV, A ^{[1
]}

机构：

[1] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77204

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.45.14167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Bi/Si(100)-(1 X 1) surface atomic structure has been studied by low-energy electron diffraction (LEED) experiments and dynamical calculations. Based on the experimental evidence that the I-V curves for the Bi/Si(100)-(1 X 1) phase are similar to those for the H/Si(100)-(1 X 1) phase, a surface structural model for Bi-induced Si(100)-(1 X 1) structure is proposed. Within the model, the Bi adatoms do not have long-range-ordered structures, but they stabilize the (1 X 1) structure of the Si surface. A multilayer LEED dynamical analysis has shown the best agreement between experiment and the (1 X 1) structural model with a 7% contraction of the first-Si-atomic-layer spacing.

引用

页码：14167 / 14170

页数：4

共 21 条

[1] POSSIBLE HIGH-TC SUPERCONDUCTIVITY IN THE BA-LA-CU-O SYSTEM [J].