THEORETICAL SIMULATION OF LOCALIZED HOLES IN MGO

被引:43
作者
SHLUGER, AL [1 ]
HEIFETS, EN [1 ]
GALE, JD [1 ]
CATLOW, CRA [1 ]
机构
[1] UNIV LATVIA, DEPT CHEM PHYS CONDENSED MATTER, RIGA 226098, LATVIA, USSR
关键词
D O I
10.1088/0953-8984/4/26/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We propose a consistent approach to the study of hole self-trapping and diffusion in ionic crystals based on the static quantum-chemical calculation of the self-trapping energy and adiabatic barriers for hole diffusion. The calculations made for MgO revealed the possibility that the hole is localized on one anion site in the perfect lattice and predict its high mobility.
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页码:5711 / 5722
页数:12
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