METASTABLE SOLID-SOLUTIONS OF ANTIMONY IN (100)SILICON

被引：22

作者：

POGANY, AP

PREUSS, T

SHORT, KT

WAGENFELD, HK

WILLIAMS, JS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

We acknowledget he Australian Research Grants Committee; t he Australian Institute of Nuclear Sciencea nd Engineeringa nd the CommonwealthS pecialR esearchC entresS chemef or financial support. This work is part of an AustralianIo n ImplantatioRne searc(hI 2R ) Group researchp rogram;

D O I：

10.1016/0167-5087(83)90875-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：731 / 736

页数：6

共 15 条

[1] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH
BLOOD, P
BROWN, WL
MILLER, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 173 - 182
[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON
CAMPISANO, SU
RIMINI, E
BAERI, P
FOTI, G
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 170 - 172
[3] FLETCHER J, 1981, I PHYS C SER, V60, P295
[4] Foell H., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P173
[5] Frank W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P31
[6] HIRSCH PB, 1971, ELECTRON MICROSCOPY
[7] RUTHERFORD BACKSCATTERING STUDY OF CRYSTAL ORIENTATION DEPENDENT ANNEALING EFFECTS IN HIGH-DOSE ANTIMONY IMPLANTED SILICON
JOSQUIN, WJMJ
TAMMINGA, Y
[J]. APPLIED PHYSICS, 1978, 15 (01): : 73 - 78
[8] UNIDIRECTIONAL CONTRACTION IN BORON-IMPLANTED LASER-ANNEALED SILICON
LARSON, BC
WHITE, CW
APPLETON, BR
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 801 - 803
[9] Narayan J., 1982, Metastable Materials Formation by Ion Implantation. Proceedings of the Materials Research Society Annual Meeting, P117
[10] PAULING L, 1948, NATURE CHEM BOND, P179

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