RUTHERFORD BACKSCATTERING STUDY OF CRYSTAL ORIENTATION DEPENDENT ANNEALING EFFECTS IN HIGH-DOSE ANTIMONY IMPLANTED SILICON

被引：11

作者：

JOSQUIN, WJMJ ^{[1
]}

TAMMINGA, Y ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS | 1978年 / 15卷 / 01期

关键词：

D O I：

10.1007/BF00896893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 78

页数：6

共 8 条

[1] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443
[2] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[3] DOBROKHOTOV EV, 1977, SOV PHYS SOLID STATE, V18, P1640
[4] DIFFUSION OF SB ALONG DISLOCATIONS IN SI
FAHRENTHOLTZ, P
MIMKES, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 78 (02): : K137 - K140
[5] Hofker W. K., 1975, PHILIPS RES REP S, V8, P1
[6] ZUR EINFACHSTREUUNG UND MEHRFACHSTREUUNG GELADENER TEILCHEN
KEIL, E
ZEITLER, E
ZINN, W
[J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1960, 15 (12): : 1031 - 1038
[7] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
MAYER, JW
MARSH, OJ
SHIFRIN, GA
BARON, R
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4073 - &
[8] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
TRUMBORE, FA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233