SOLID-PHASE EPITAXY AND DOPING OF SI THROUGH SB-ENHANCED RECRYSTALLIZATION OF POLYCRYSTALLINE SI

被引：5

作者：

GONG, SF ^{[1
]}

HENTZELL, HTG ^{[1
]}

RADNOCZI, G ^{[1
]}

CHARAI, A ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：902 / 904

页数：3

共 12 条

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[2]

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[3]

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[6] AL-DOPED AND SB-DOPED POLYCRYSTALLINE SILICON OBTAINED BY MEANS OF METAL-INDUCED CRYSTALLIZATION [J].

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[7]

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[8] SOLID-PHASE EPITAXY OF EVAPORATED AMORPHOUS-SILICON FILMS [J].

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[9] EXPERIMENTAL-STUDY OF THE MINORITY-CARRIER TRANSPORT AT THE POLYSILICON MONOSILICON INTERFACE [J].

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[10]

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