INITIAL SOLID-STATE REACTIONS BETWEEN CRYSTALLINE SB AND AMORPHOUS SI THIN-FILMS

[1] ANGILELLO J, 1980, P THIN FILM INTERFAC, P369

[2] [Anonymous], 1986, BINARY ALLOY PHASE D

[3] DIFFUSION OF ARSENIC IN BILAYER POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 365 - 369

[4] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476

[5] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[6] A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1826 - 1833

[7] BERRY LG, 1974, POWDER DIFFRACTION F, P5

[8] CLEMENS BM, 1985, APPL PHYS LETT, V47, P947

[9] EINSPRUCH NG, 1983, VLSI ELECTRONICS MIC, V6, P49

[10] GHOSH C, 1975, THIN SOLID FILMS, V29, P1, DOI 10.1016/0040-6090(75)90210-2

[1] ANGILELLO J, 1980, P THIN FILM INTERFAC, P369

[2] [Anonymous], 1986, BINARY ALLOY PHASE D

[3] DIFFUSION OF ARSENIC IN BILAYER POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 365 - 369

[4] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476

[5] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[6] A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1826 - 1833

[7] BERRY LG, 1974, POWDER DIFFRACTION F, P5

[8] CLEMENS BM, 1985, APPL PHYS LETT, V47, P947

[9] EINSPRUCH NG, 1983, VLSI ELECTRONICS MIC, V6, P49

[10] GHOSH C, 1975, THIN SOLID FILMS, V29, P1, DOI 10.1016/0040-6090(75)90210-2