MICROHARDNESS OF PROTON BOMBARDED GAP SINGLE-CRYSTALS

被引：9

作者：

ASCHERON, C ^{[1
]}

NEUMANN, H ^{[1
]}

DLUBEK, G ^{[1
]}

KRAUSE, R ^{[1
]}

机构：

[1] MARTIN LUTHER UNIV,SEKT PHYS,DDR-4020 HALLE,GER DEM REP

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1986年 / 5卷 / 09期

关键词：

D O I：

10.1007/BF01729263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：891 / 892

页数：2

共 10 条

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[9] DAMAGED-INDUCED ISOLATION IN N-TYPE INP BY LIGHT-ION IMPLANTATION [J].

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[10] HARDNESS ANISOTROPY OF III-V-SEMICONDUCTING COMPOUNDS AND ALLOYS [J].

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