FRACTAL ASPECTS RELATED TO THE SI OXIDATION PROCESS

被引：16

作者：

VERDI, L ^{[1
]}

MIOTELLO, A ^{[1
]}

机构：

[1] IST NAZL FIS MAT,I-38050 TRENT,ITALY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5469

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a model for the silicon oxidation process in dry atmosphere, where the growing oxide is seen not as a continuous random lattice but instead as a granular random lattice through which oxygen diffusion occurs. A reactive layer connects the oxide with the Si bulk at the SiO2/Si interface. The model is applied to a representative set of experimental results, obtained at different temperatures and oxygen pressures, leading to a consistent picture of the oxidation process in terms of a fractal geometry with a definite correlation length 4 nm, and random-walk dimension dw3.25. © 1995 The American Physical Society.

引用

页码：5469 / 5472

页数：4

共 19 条

[1] CORRELATION-EFFECTS ON RAMAN-SCATTERING FROM LOW-ENERGY VIBRATIONAL-MODES IN GLASSES .2. EXPERIMENTAL RESULTS [J].