PHOTOELECTRIC CURRENTS IN THIN AL2O3 FILMS

被引:2
作者
KLEEFSTRA, M [1 ]
VANZANTEN, AT [1 ]
CERIOLO, P [1 ]
机构
[1] DELFT UNIV TECHNOL,ELECT ENGN DEPT,DELFT,NETHERLANDS
关键词
D O I
10.1016/0040-6090(75)90087-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:225 / 231
页数:7
相关论文
共 12 条
[1]   BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].
DEAL, BE ;
SNOW, EH ;
MEAD, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&
[2]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[3]   PHOTOEMISSION OF HOLES AND ELECTRONS FROM ALUMINUM INTO ALUMINUM OXIDE [J].
GOODMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2176-&
[4]   SPUTTERING OF OXIDE FILMS IN PLASMA ANODIZATION OF ALUMINUM [J].
LOCKER, LD ;
SKOLNICK, LP .
APPLIED PHYSICS LETTERS, 1968, 12 (11) :396-&
[5]  
MICHELETTI FB, 1971, SOLID STATE TECHNOL, V14, P27
[6]  
MUSATOV AL, 1968, FIZ TVERD TELA+, V9, P2580
[7]   POTENTIAL BARRIER PARAMETERS IN THIN-FILM AL-AL2O3-METAL DIODES [J].
NELSON, OL ;
ANDERSON, DE .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :77-&
[8]   MONTE CARLO CALCULATIONS OF INTERNAL PHOTOEMISSION YIELDS IN M-I-M THIN-FILM STRUCTURES [J].
SCHUERME.FL ;
YOUNG, CR ;
BLASINGA.JM .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1791-&
[9]  
SCHUERMEYER FL, 1965, J APPL PHYS, V37, P1998
[10]   PHOTOCURRENTS THROUGH THIN FILMS OF AL2O3 [J].
SHEPARD, KW .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) :796-&