THE CZOCHRALSKI GROWTH OF GALLIUM ANTIMONIDE SINGLE-CRYSTALS UNDER REDUCING CONDITIONS

被引：23

作者：

COCKAYNE, B ^{[1
]}

STEWARD, VW ^{[1
]}

BROWN, GT ^{[1
]}

MACEWAN, WR ^{[1
]}

YOUNG, ML ^{[1
]}

COURTNEY, SJ ^{[1
]}

机构：

[1] ADMIRALTY MARINE TECHNOL ESTAB,POOLE,DORSET,ENGLAND

来源：

关键词：

D O I：

10.1016/0022-0248(82)90235-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：267 / 272

页数：6

共 13 条

[1] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4
[2] Allegre J., 1970, Crystal Lattice Defects, V1, P343
[3] ANISOTROPIC SEGREGATION IN INSB
ALLRED, WP
BATE, RT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 258 - 261
[4] BROWN GT, UNPUB J MATER SCI
[5] DASEVSKIJ MA, 1969, SOVIET INORG MATER, V5, P1141
[6] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[7] DIRECT SYNTHESIS AND CRYSTALLIZATION OF GASB
HARSY, M
GOROG, T
LENDVAY, E
KOLTAI, F
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) : 234 - 238
[8] KATSUI A, 1980, JPN J APPL PHYS, V19, pL813
[9] MIGAUCHI T, 1965, JPN J APPL PHYS, V4, P317
[10] A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB
MIYAZAWA, S
KONDO, S
NAGANUMA, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 670 - 674