PRESSURE-INDUCED SUPERCONDUCTIVITY IN HIGH-PRESSURE PHASES OF SI

被引：15

作者：

LIN, TH ^{[1
]}

DONG, WY ^{[1
]}

DUNN, KJ ^{[1
]}

WAGNER, CNJ ^{[1
]}

BUNDY, FP ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.33.7820

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7820 / 7822

页数：3

共 11 条

[1]

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[6] MATERIALS AND TECHNIQUES FOR PRESSURE CALIBRATION BY RESISTANCE-JUMP TRANSITIONS UP TO 500 KILOBARS [J].

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[7] PHASES OF SILICON AT HIGH-PRESSURE [J].

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SPAIN, IL .

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[8]

Il'ina M. A., 1980, Soviet Physics - Solid State, V22, P1833

[9] HIGH-PRESSURE AND LOW-TEMPERATURE STUDY OF ELECTRICAL-RESISTANCE OF LITHIUM [J].

LIN, TH ;

DUNN, KJ .

PHYSICAL REVIEW B, 1986, 33 (02) :807-811

[10] STRUCTURAL PHASE-TRANSITIONS IN SI AND GE UNDER PRESSURES UP TO 50 GPA [J].

OLIJNYK, H ;

SIKKA, SK ;

HOLZAPFEL, WB .

PHYSICS LETTERS A, 1984, 103 (03) :137-140

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