GROWTH OF GAXIN1-X SB LIQUID-PHASE EPITAXIAL LAYERS FROM A KNOWLEDGE OF TERNARY PHASE-DIAGRAM

被引：21

作者：

JOULLIE, A ^{[1
]}

AULOMBARD, R ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC, CNRS, CTR ETUD ELECTR SOLIDES, 34060 MONTPELLIER, FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期

关键词：

D O I：

10.1016/0022-0248(74)90318-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：276 / 281

页数：6

相关论文

共 27 条

[1] GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE
ANDRE, E
LEDUC, JM
[J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (01) : 1 - &
[2] ANDRE E, 1971, J CRYST GROWTH, V13, P663
[3] LIQUIDUS AND SOLIDUS DATA AT 500 DEGREES C FOR IN-GA-SB SYSTEM
ANTYPAS, GA
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 16 (02) : 181 - &
[4] GA-GAP-GAAS TERNARY PHASE DIAGRAM
ANTYPAS, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 700 - &
[5] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER
ANTYPAS, GA
JAMES, LW
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2165 - &
[6] IN-GA-SB TERNARY PHASE DIAGRAM
BLOM, GM
PLASKETT, TS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1831 - &
[7] LIQUID PHASE EPITAXY OF ALXGA1-XAS FOR MONOLITHIC PLANAR STRUCTURES
BLUM, JM
SHIH, KK
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1498 - &
[8] CROSSLEY I, 1972, J CRYST GROWTH, V15, P268, DOI 10.1016/0022-0248(72)90021-8
[9] GUGGENHEIM EA, 1952, MIXTURES
[10] A MODEL FOR ANALYSIS OF ENTHALPIES AND ENTROPIES OF LIQUID BINARY ALLOYS
HICTER, P
MATHIEU, JC
DURAND, F
BONNIER, E
[J]. ADVANCES IN PHYSICS, 1967, 16 (63) : 523 - &