NANOMETER STRUCTURES IN SEMICONDUCTORS FORMED BY LOW-ENERGY ION-IMPLANTATION

[1] BEAN JC, 1981, IMPURITY DOPING

[2] CALCULATION OF PROJECTED RANGES - ANALYTICAL SOLUTIONS AND A SIMPLE GENERAL ALGORITHM [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 199 - 206

[3] Bottiger J., 1971, Radiation Effects, V11, P61, DOI 10.1080/00337577108230450

[4] COOPER JA, 1982, IEEE ELECTRON DEVICE, V12, P407

[5] DEARNALY G, 1973, ION IMPLANTATION, P596

[6] DEJONG T, 1983, UNPUB MATERIALS LETT

[7] PERIODIC DOPING STRUCTURE IN GAAS [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2): : 145 - 168

[8] FLETCHER J, 1981, I PHYS C SER, V60, P295

[9] FREEMAN JH, 1976, I PHYS C SER, V28, P340

[10] ISHIWARA H, UNPUB NUCL INSTRUM M

[1] BEAN JC, 1981, IMPURITY DOPING

[2] CALCULATION OF PROJECTED RANGES - ANALYTICAL SOLUTIONS AND A SIMPLE GENERAL ALGORITHM [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 199 - 206

[3] Bottiger J., 1971, Radiation Effects, V11, P61, DOI 10.1080/00337577108230450

[4] COOPER JA, 1982, IEEE ELECTRON DEVICE, V12, P407

[5] DEARNALY G, 1973, ION IMPLANTATION, P596

[6] DEJONG T, 1983, UNPUB MATERIALS LETT

[7] PERIODIC DOPING STRUCTURE IN GAAS [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2): : 145 - 168

[8] FLETCHER J, 1981, I PHYS C SER, V60, P295

[9] FREEMAN JH, 1976, I PHYS C SER, V28, P340

[10] ISHIWARA H, UNPUB NUCL INSTRUM M