BOUND PHONONS IN N-TYPE GAP

被引：10

作者：

GALTIER, P ^{[1
]}

MARTINEZ, G ^{[1
]}

机构：

[1] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.38.10542

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10542 / 10545

页数：4

共 19 条

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[2]

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MANCHON, DD ;

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[4] INTERACTING DONORS IN N-TYPE GAP STUDIED WITH RAMAN-SCATTERING AND ELECTRON-SPIN-RESONANCE TECHNIQUES [J].

GALTIER, P ;

MARTINEZ, G ;

LAMBERT, B ;

GAUNEAU, M .

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[5]

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[6]

JUSSERAND B, 1986, HETEROJUNCTIONS SEMI, P108

[7] ACCEPTOR-BOUND PHONONS IN CUBIC SEMICONDUCTORS [J].

KANEHISA, MA ;

PETRITIS, D ;

BALKANSKI, M .

PHYSICAL REVIEW B, 1985, 31 (10) :6469-6482

[8]

KOPYLOV AA, 1977, PHYS TECH SEMICOND, V5, P877

[9]

KUNC K, 1973, ANN PHYS-PARIS, V8, P319

[10]

MANCHON DD, 1970, UNPUB 10TH P INT C P

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