GENERALIZED TRANSCONDUCTANCE AND TRANSRESISTANCE METHODS FOR MOSFET CHARACTERIZATION

被引：4

作者：

JAIN, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 01期

关键词：

D O I：

10.1016/0038-1101(89)90051-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：77 / 86

页数：10

共 12 条

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[9] ON THE ACCURACY OF CHANNEL LENGTH CHARACTERIZATION OF LDD MOSFETS [J].

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