ANNEALING ENCAPSULANTS FOR INP .2. PHOTO-LUMINESCENCE STUDIES

被引：11

作者：

OBERSTAR, JD ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

THIN SOLID FILMS | 1982年 / 94卷 / 02期

关键词：

D O I：

10.1016/0040-6090(82)90508-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：161 / 170

页数：10

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共 17 条

[1] PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP
BACHMANN, KJ
BUEHLER, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 835 - 846
[2] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS
BAUMANN, GG
BENZ, KW
PILKUHN, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1232 - 1235
[3] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA
DONNELLY, JP
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420
[4] FREE AND BOUND ELECTRON TRANSITIONS TO ACCEPTORS IN INDIUM PHOSPHIDE
FISCHBACH, JU
PILKUHN, MH
BENZ, G
STATH, N
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 725 - +
[5] HENRY RL, 1977, I PHYS C SER B, V33, P28
[6] KASAHARA J, 1980, J APPL PHYS, V51, P419
[7] KOSCHEL WH, 1977, I PHYS C SER A, V33, P98
[8] IRON AND CHROMIUM REDISTRIBUTION IN SEMI-INSULATING INP
OBERSTAR, JD
STREETMAN, BG
BAKER, JE
WILLIAMS, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) : 1814 - 1817
[9] PHOTO-LUMINESCENCE STUDIES OF HE-4-IMPLANTED AND BE-9-IMPLANTED SEMI-INSULATING INP
OBERSTAR, JD
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5154 - 5162
[10] PHOTO-LUMINESCENCE FROM MG-IMPLANTED, EPITAXIAL, AND SEMI-INSULATING INP
POMRENKE, GS
PARK, YS
HENGEHOLD, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 969 - 977