VAPOR TRANSPORT AND EPITAXIAL-GROWTH OF GE IN A GE GEI4 CLOSED SYSTEM BY THE FORCED FLUX METHOD

被引：5

作者：

LAUNAY, JC ^{[1
]}

SALDUCCI, C ^{[1
]}

CADORET, R ^{[1
]}

机构：

[1] UER SCI,PHYS MILIEUX CONDENSES LAB,F-63170 AUBIERE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 74卷 / 03期

关键词：

D O I：

10.1016/0022-0248(86)90202-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：559 / 567

页数：9

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