NONLINEAR DIFFUSION EQUATION FOR EPITAXIAL-GROWTH AND RECOVERY ON VICINAL SURFACES

被引：10

作者：

MYERSBEAGHTON, AK ^{[1
]}

VVEDENSKY, DD ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90964-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Recently, we derived a theoretical model for molecular-beam epitaxy (MBE) on vicinal surfaces that includes both adatom diffusion and a nonlinear term for diatomic island formation. The model was shown to reproduce and explain both the transient behavior of reflection high-energy electron-diffraction measurements of MBE on stepped surfaces and their dependence on the growth conditions. Here, we refine the model to include the formation of higher-atomic islands (with up to ten atoms) as well as their decay, and incorporate a simple model for atom attachment and detachment kinetics at the step edges. We show that incorporation of island break-up is necessary for a realistic model of recovery.

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收藏

页码：162 / 167

页数：6

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