MELTING AND ORIENTATIONAL EPITAXY IN ARGON AND XENON MONOLAYERS ON GRAPHITE

被引:50
作者
DAMICO, KL
BOHR, J
MONCTON, DE
GIBBS, D
机构
[1] EXXON RES & ENGN CO,CORP RES LABS,ANNANDALE,NJ 08801
[2] RISO NATL LAB,DEPT PHYS,DK-4000 ROSKILDE,DENMARK
[3] STANFORD UNIV,SYNCHROTRON RADIAT LAB,STANFORD,CA 94305
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 07期
关键词
D O I
10.1103/PhysRevB.41.4368
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the melting behavior for Ar at a coverage of 0.81 and the orientational-epitaxy effect for Ar and Xe. We find that the Ar melts continuously from a rotated incommensurate solid to a rotated fluid phase; the fluid with positional correlations of 400 e/rA is rotated by 2°. The melting behavior agrees well with that observed by x-ray diffraction using a ZYX-graphite substrate, and is consistent with the heat-capacity data of Migone et al. For Xe, the orientational-epitaxy data show a rotation to zero for increasing misfit magnitude, contrary to the Ar and Kr behavior. This is discussed in light of the role of entropy in the structure of this system. © 1990 The American Physical Society.
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页码:4368 / 4376
页数:9
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