EXTENDED MODIFICATIONS OF ELECTRONIC-STRUCTURES CAUSED BY DEFECTS - SCANNING-TUNNELING-MICROSCOPY OF GRAPHITE

被引：35

作者：

RONG, ZY

机构：

[1] Physics Department, State University of New York-Stony Brook, Stony Brook

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.50.1839

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic effects from two well-defined defects are identified and measured using scanning tunneling microscopy on graphite. An atomic vacancy on the topmost (0001) plane caused a lowering of apparent z height in a 30 angstrom X 30 angstrom area by approximately 1.5 angstrom. A plane rotation relative to the third surface layer caused a Moire pattern, with an attenuation along the c axis about 2.6 per monolayer. A ''supervacancy'' was imaged due to competition between the above two effects. An explanation based on changes in density of states near the Fermi level is proposed.

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页码：1839 / 1843

页数：5

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