CRITICAL COMPARISON OF LIGHT-INDUCED-CHANGES IN SUB-BAND-GAP ABSORPTION AND PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON

被引：8

作者：

BHATTACHARYA, E

MAHAN, AH

CRANDALL, RS

PANKOVE, JI

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 13期

关键词：

D O I：

10.1063/1.100729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1247 / 1249

页数：3

共 11 条

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[4] EVIDENCE FOR GRAPHITIC-TYPE BONDING IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].

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MADAN, A .

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[5]

MAHAN AH, 1988, MRS S, V118, P641

[6]

MCMAHON TJ, 1987, 157 AIP C P STAB AM, P278

[7] LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

SKUMANICH, A ;

AMER, NM .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :643-644

[8]

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[9]

STAFFORD BL, 1987, 157 AIP C P STAB AM

[10] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].

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JACKSON, WB ;

TSAI, CC .

PHYSICAL REVIEW B, 1985, 32 (01) :23-47

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