MODEL OF ELECTRONIC STATES AT THE SI-SIO2 INTERFACE

被引：25

作者：

CARRICO, AS ^{[1
]}

ELLIOTT, RJ ^{[1
]}

BARRIO, RA ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT THEORET PHYS,1 KEBLE RD,OXFORD OX1 3NP,ENGLAND

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.872

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：872 / 878

页数：7

共 18 条

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