SELECTION-RULES IN RAMAN-SCATTERING BY PLASMONS IN QUANTUM WIRES

被引:22
作者
DAHL, C [1 ]
JUSSERAND, B [1 ]
ETIENNE, B [1 ]
机构
[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 23期
关键词
D O I
10.1103/PhysRevB.51.17211
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the Raman-scattering intensities of plasmons in arrays of wires with widths down to 100 nm, fabricated from a modulation-doped single GaAs quantum well by deep reactive ion etching. We have discovered that plasmons can appear in the depolarized Raman spectra, owing to the strong corrugation of the surface of such structures. When the in-plane scattering wave vector is parallel to the wires, plasmon branches with even and odd parity are selectively excited in the polarized and depolarized configuration. © 1995 The American Physical Society.
引用
收藏
页码:17211 / 17214
页数:4
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