PREPARATION AND CHARACTERIZATION OF TUNGSTEN DISELENIDE THIN-FILMS

被引：57

作者：

POUZET, J ^{[1
]}

BERNEDE, JC ^{[1
]}

KHELLIL, A ^{[1
]}

ESSAIDI, H ^{[1
]}

BENHIDA, S ^{[1
]}

机构：

[1] UNIV ORAN ES SENIA,MICROOPTOELECTR LAB,ORAN,ALGERIA

来源：

THIN SOLID FILMS | 1992年 / 208卷 / 02期

关键词：

D O I：

10.1016/0040-6090(92)90652-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

WSe2 layers synthesized by annealing tungsten foils and r.f.-sputtered tungsten thin films under selenium pressure have been investigated by scanning electron microscopy, X-ray analysis, X-ray photoelectron spectroscopy (XPS), optical absorption and electrical resistance measurements. It has been found that stoichiometric layers are obtained after appropriate processing at a temperature lower than the glass melting temperature. The films crystallize in the hexagonal structure. The crystallites develop preferentially along the c axis. The binding energies deduced from the XPS lines were found to be in good agreement with those of the reference powder. The electrical resistance is governed by hopping conduction in the low temperature range (80-250 K) and by grain-boundary-scattering mechanisms at higher temperature.

引用

页码：252 / 259

页数：8

共 30 条

[1] KRAMERS-KRONIG ANALYSIS OF REFLECTIVITY SPECTRA OF 3R-WS2 AND 2H-WSE2 [J].