ELECTRICAL TRANSPORT-PROPERTIES IN EPITAXIAL CODEPOSITED COSI2 LAYERS ON (111) SI

被引：42

作者：

DUBOZ, JY

BADOZ, PA

ROSENCHER, E

HENZ, J

OSPELT, M

VONKANEL, H

BRIGGS, A

机构：

[1] SWISS FED INST TECHNOL,CH-8093 ZURICH,SWITZERLAND

[2] CNRS,CTR RECH TRES BASSES TEMP,F-38042 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.100560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：788 / 790

页数：3

共 14 条

[1] LOW-TEMPERATURE TRANSPORT-PROPERTIES OF ULTRATHIN COSI2 EPITAXIAL-FILMS
BADOZ, PA
BRIGGS, A
ROSENCHER, E
DAVITAYA, FA
DANTERROCHES, C
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 169 - 171
[2] INSULATING, METALLIC, OR SEMIMETALLIC ELECTRONIC NATURE OF XSI2 COMPOUNDS - APPLICATION TO WSI2
BADOZ, PA
ROSENCHER, E
TORRES, J
FISHMAN, G
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 890 - 895
[3] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR
DAVITAYA, FA
CHROBOCZEK, JA
DANTERROCHES, C
GLASTRE, G
CAMPIDELLI, Y
ROSENCHER, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469
[4] FISHER AEMJ, 1987, PHYS REV B, V36, P4769
[5] FISHMAN G, UNPUB
[6] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699
[7] GROWTH OF EPITAXIAL ULTRATHIN CONTINUOUS COSI2 LAYERS ON SI(111)
HENZ, J
VONKANEL, H
OSPELT, M
WACHTER, P
[J]. SURFACE SCIENCE, 1987, 189 : 1055 - 1061
[8] TRANSIENT CAPACITANCE STUDY OF EPITAXIAL COSI2/SI(111)SCHOTTKY BARRIERS
ROSENCHER, E
DELAGE, S
DAVITAYA, FA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 762 - 765
[9] ROSENCHER E, 1987, MATER RES SOC S P, V91, P415
[10] SAITOH S, 1981, JPN J APPL PHYS, V20, P1649, DOI 10.1143/JJAP.20.1649