TRANSIENT CAPACITANCE STUDY OF EPITAXIAL COSI2/SI(111)SCHOTTKY BARRIERS

被引：28

作者：

ROSENCHER, E

DELAGE, S

DAVITAYA, FA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：762 / 765

页数：4

共 9 条

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[2]

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[8] EPITAXIAL SILICIDES [J].

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