KINETICS OF FORMATION AND PROPERTIES OF EPITAXIAL COSI2 FILMS ON SI (111)

被引:47
作者
DAVITAYA, FA
DELAGE, S
ROSENCHER, E
DERRIEN, J
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词
D O I
10.1116/1.583140
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:770 / 773
页数:4
相关论文
共 18 条
  • [1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
    ANDREWS, JM
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
  • [2] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2
    CHEN, LJ
    MAYER, JW
    TU, KN
    [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 135 - 141
  • [3] DERRIEN J, UNPUB
  • [4] ISHIBASHI K, 1983, APPL PHYS LETT, V43, P606
  • [5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS
    MURARKA, SP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792
  • [6] COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE
    PIRRI, C
    PERUCHETTI, JC
    GEWINNER, G
    DERRIEN, J
    [J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3391 - 3397
  • [7] PIRRI C, UNPUB
  • [8] PIRRI C, SURF SCI
  • [9] Poate J M, 1978, THIN FILMS INTERDIFF
  • [10] ROSENCHER E, 1985, J VAC SCI TECHNOL B, V2, P762