HIGH-RESOLUTION ELECTRON-ENERGY LOSS STUDIES OF AL AND GE CHEMISORPTION ON SILICON

被引：16

作者：

KELLY, MK

MARGARITONDO, G

ANDERSON, J

FRANKEL, DJ

LAPEYRE, GJ

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] MONTANA STATE UNIV,DEPT PHYS,BOZEMAN,MT 59717

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.572768

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1481 / 1483

页数：3

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