EFFECT OF THE PREDEPOSITION OF GOLD, SILVER, TIN OR LEAD ON THE GROWTH AND CRYSTALLIZATION PROCESSES OF AMORPHOUS ANTIMONY LAYERS

A study is made, by the in situ measurement of electrical conductivity or resistivity and by electron microscopy, of the growth and crystallization processes of amorphous antimony layers deposited onto a predeposited layer of gold, silver, tin or lead as a function of the thickness d(M) of such a layer. A complete specimen is prepared on both glass plate and SiO(x) film at a pressure of 10(-5) Pa. When d(M) is smaller than a certain value delta-M, the antimony layer crystallizes as it becomes electrically continuous while, when d(M) is equal to or larger than delta-M, the antimony layer begins to crystallize at an earlier growth stage where it retains the discontinuous island structure. The value of delta-M depends on the nature of the metal predeposit: delta-Au almost-equal-to 0.05 nm, delta-Ag almost-equal-to 2.00 nm, delta-Sn almost-equal-to 2.00 nm, and delta-Pb is too small to be definitely estimated although delta-Pb < 0.06 nm at least. In conclusion, when d(M) is smaller than delta-M, the nucleation of crystallites in the amorphous antimony layer is mainly promoted through the sudden enhancement of the stress at the coalescence between islands throughout the antimony layer and, when d(M) is equal to or larger than delta-M, it is mainly promoted possibly through the alloying process at interfaces between the paired layers.