HOLE MOBILITY IN ACCEPTOR-DOPED, MONOCRYSTALLINE SRTIO3

被引：43

作者：

FLEISCHER, M ^{[1
]}

MEIXNER, H ^{[1
]}

TRAGUT, C ^{[1
]}

机构：

[1] UNIV KARLSRUHE,ITE,W-7500 KARLSRUHE,GERMANY

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1992年 / 75卷 / 06期

关键词：

STRONTIUM TITANATE; HOLES; MOBILITY; OXYGEN PARTIAL PRESSURE; ELECTRICAL PROPERTIES;

D O I：

10.1111/j.1151-2916.1992.tb04242.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oxidation reaction equilibrium constant and the holes mobility in p-type-semiconducting SrTiO3 single crystals were determined directly by simultaneous Hall and conductivity measurements between 500-degrees and 1000-degrees-C. This information and the SrTiO3 defect model were used to interpret the electrical measurements taken on this substance which represents a model substance for semiconducting perovskites. Measurements with varying oxygen partial pressures showed that shifts of the crystal defect equilibrium give rise to changes in the carrier concentration with unchanged carrier mobility.

引用

页码：1666 / 1668

页数：3

共 19 条

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