MULTILEVEL MONOLITHIC INDUCTORS IN SILICON TECHNOLOGY

被引：50

作者：

SOYUER, M

BURGHARTZ, JN

JENKINS, KA

PONNAPALLI, S

EWEN, JF

PENCE, WE

机构：

[1] IBM T.J. Watson Research Center, NY 10598, PO Box 218, M/S 23-245, Yorktown Heights

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 05期

关键词：

BICMOS INTEGRATED CIRCUITS; INDUCTORS; MMIC;

D O I：

10.1049/el:19950241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps.

引用

页码：359 / 360

页数：2

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