PROPERTIES OF HIGH HEAT-RESISTANCE MU-C-SICX-H EMITTER SILICON HBTS

[1] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186

[2] SAKAI T, 1985, 17TH C SOL STAT DEV, P373

[3] Sasaki K., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P186, DOI 10.1109/IEDM.1987.191383

[4] Scherrer P., 1918, PHYS REV, V2, P98

[1] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186

[2] SAKAI T, 1985, 17TH C SOL STAT DEV, P373

[3] Sasaki K., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P186, DOI 10.1109/IEDM.1987.191383

[4] Scherrer P., 1918, PHYS REV, V2, P98