PICOSECOND GAAS PHOTOCONDUCTORS ON SILICON SUBSTRATES FOR LOCAL INTEGRATION WITH SILICON DEVICES AND CIRCUITS

被引:4
作者
MORSE, JD [1 ]
MARIELLA, R [1 ]
ANDERSON, GD [1 ]
DUTTON, RW [1 ]
机构
[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305
关键词
D O I
10.1109/55.31664
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:7 / 10
页数:4
相关论文
共 4 条
[1]   AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J].
AUSTON, DH ;
LAVALLARD, P ;
SOL, N ;
KAPLAN, D .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :66-68
[2]  
AUSTON DH, 1984, PICOSECOND OPTOELECT
[3]   PICOSECOND OMVPE GAAS/SIO2 PHOTOCONDUCTIVE DEVICES AND APPLICATIONS IN MATERIALS CHARACTERIZATION [J].
JOHNSON, AM ;
LUM, RM ;
SIMPSON, WM ;
KLINGERT, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (07) :1180-1184
[4]   PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS [J].
SMITH, PR ;
AUSTON, DH ;
JOHNSON, AM ;
AUGUSTYNIAK, WM .
APPLIED PHYSICS LETTERS, 1981, 38 (01) :47-50