PICOSECOND OMVPE GAAS/SIO2 PHOTOCONDUCTIVE DEVICES AND APPLICATIONS IN MATERIALS CHARACTERIZATION

被引：12

作者：

JOHNSON, AM

LUM, RM

SIMPSON, WM

KLINGERT, J

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

关键词：

D O I：

10.1109/JQE.1987.1073486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1180 / 1184

页数：5

共 13 条

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[5] Johnson A. M., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P188
[6] PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON
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[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6816 - 6819
[7] JOHNSON AM, 1984, APPL PHYS LETT, V44, P729, DOI 10.1063/1.94897
[8] CARRIER MOBILITY IN POLYCRYSTALLINE SILICON UNDER SOLAR ILLUMINATION
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[10] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM
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