PICOSECOND PHOTOCONDUCTIVITY IN GERMANIUM FILMS

被引：22

作者：

DEFONZO, AP

机构：

来源：

关键词：

D O I：

10.1063/1.92766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：480 / 482

页数：3

共 9 条

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
AUSTON, DH
JOHNSON, AM
SMITH, PR
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 371 - 373
[2] AUSTON DH, 1980, APPL PHYS LETT, V35, P66
[3] DEFONZO AP, UNPUBLISHED
[4] FAST PHOTOCONDUCTIVE DETECTOR USING PARA-INO.53GAO.47AS WITH RESPONSE TO 1.7-MU-M
DEGANI, J
LEHENY, RF
NAHORY, RE
POLLACK, MA
HERITAGE, JP
DEWINTER, JC
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 27 - 29
[5] GAMMEL JC, 1980, APPL PHYS LETT, V36, P151
[6] HIGH-SPEED INP OPTOELECTRONIC SWITCH
LEONBERGER, FJ
MOULTON, PF
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 712 - 714
[7] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS
SMITH, PR
AUSTON, DH
JOHNSON, AM
AUGUSTYNIAK, WM
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 47 - 50
[8] SUGATA T, 1980, JPN J APPL PHYS, V19, pL27
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO