EFFECT OF PRESSURE ON THE SOLID-PHASE EPITAXIAL REGROWTH RATE OF SI

被引：36

作者：

NYGREN, E ^{[1
]}

AZIZ, MJ ^{[1
]}

TURNBULL, D ^{[1
]}

POATE, JM ^{[1
]}

JACOBSON, DC ^{[1
]}

HULL, R ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：232 / 233

页数：2

共 7 条

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[6]

OLSON GL, 1983, LASER SOLID INTERACT

[7] COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SI [J].

SUNI, I ;

GOLTZ, G ;

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LAU, SS .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :269-271

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