IMPURITY AND CONCENTRATION-DEPENDENCE OF GROWTH-RATE DURING SOLID EPITAXY OF IMPLANTED SI

被引：11

作者：

CAMPISANO, SU

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 29卷 / 03期

关键词：

D O I：

10.1007/BF00617771

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：147 / 149

页数：3

共 15 条

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