ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：51

作者：

STUTZMANN, M

JACKSON, WB

TSAI, CC

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.34.63

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：63 / 72

页数：10

共 24 条

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