DEVELOPMENT OF POSITIVE PHOTORESISTS

被引：173

作者：

MACK, CA

机构：

[1] US Dep of Defense, Fort Meade, MD,, USA, US Dep of Defense, Fort Meade, MD, USA

来源：

关键词：

D O I：

10.1149/1.2100396

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：148 / 152

页数：5

共 11 条

[1] ARCUS RA, 1986, P SPIE, V631
[2] A SIMPLE-MODEL FOR PREDICTING CONTRAST IN PHOTORESISTS
BABU, SV
SRINIVASAN, V
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1896 - 1898
[3] THERMAL EFFECTS ON PHOTORESIST AZ1350J
DILL, FH
SHAW, JM
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 210 - 218
[4] CHARACTERIZATION OF POSITIVE PHOTORESIST
DILL, FH
HORNBERGER, WP
HAUGE, PS
SHAW, JM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) : 445 - 452
[5] HINSBERG WD, 1984, P SOC PHOTO-OPT INST, V469, P57, DOI 10.1117/12.941777
[6] JOHNSON DW, 1984, P SOC PHOTO-OPT INST, V469, P72, DOI 10.1117/12.941779
[7] KIM DJ, 1984, IEEE T ELECTRON DEV, V31, P1730
[8] Mack C.A., 1985, KODAK MICROELECTRONI, P155
[9] MACK CA, 1985, P SOC PHOTO-OPT INST, V538, P207
[10] NARAIMHAM MA, 1977, P SOC PHOTO-OPT INS, V100, P57