MECHANISM FOR NEGATIVE DIFFERENTIAL RESISTANCE IN III-V AND II-VI SEMICONDUCTORS ASSOCIATED WITH ENHANCED RADIATIVE-CAPTURE OF HOT-ELECTRONS

被引：12

作者：

RIDLEY, BK ^{[1
]}

机构：

[1] UNIV ESSEX,DEPT PHYS,COLCHESTER,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 06期

关键词：

D O I：

10.1088/0022-3719/7/6/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1169 / 1173

页数：5

共 6 条

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ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06) :1077-&

[2]

BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632

[3] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

[4] ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J].

NORTHROP, DC ;

THORNTON, PR ;

TREZISE, KE .

RIDLEY, BK ;

CRISP, JJ ;

SHISHIYANU, F .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (02) :187-+

RIDLEY, BK ;

WATKINS, TB .