TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER RECOMBINATION VELOCITIES AT GRAIN-BOUNDARIES IN SILICON

被引：13

作者：

SEAGER, CH

机构：

来源：

关键词：

D O I：

10.1063/1.93675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：855 / 857

页数：3

共 18 条

CARD, HC ;

YANG, ES .

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Papon A. M., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P27

[8]

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[9]

PIKE GE, 1981, ADV CERAM, V1, P53

[10] GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON [J].

SEAGER, CH .