BERYLLIUM IMPLANTATION DOPING OF INGAAS

被引：23

作者：

TELL, B

LEHENY, RF

LIAO, ASH

BRIDGES, TJ

BURKHARDT, EG

CHANG, TY

BEEBE, ED

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：438 / 440

页数：3

共 13 条

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[2] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J].

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[3]

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[4]

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[5] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

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BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[6] CHARACTERIZATION OF IN0.53GA0.47AS PHOTO-DIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCE [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED ;

DEWINTER, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :227-231

[7]

LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507

[8] IN0.53GA0.47AS N-CHANNEL NATIVE OXIDE INVERSION MODE FIELD-EFFECT TRANSISTOR [J].

LIAO, ASH ;

TELL, B ;

LEHENY, RF ;

CHANG, TY .

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[9]

OCONNER P, 1982, IEEE ELECTRON DEVICE, V64, pR20

[10]

PEARSALL TP, 1981, I PHYS C SER, V56, P639

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