THE EFFECT OF VELOCITY SATURATION ON THE SHAPE OF THE CURRENT SIGNALS IN SILICON DETECTORS

被引：1

作者：

CATTANEO, PW

机构：

[1] Istituto Nazionale di Fisica Nucleare, Sezione di Pavia, 27100 Pavia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 311卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)90657-P

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Current signals delivered by a silicon p+-n planar junction are computed using Ramo's theorem, taking into account the dependence of the mobility on the electric field strength.

引用

页码：573 / 579

页数：7

共 17 条

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