INSULATED-GATE MULTIPLE QUANTUM-WELL OPTICAL MODULATOR ON INP

被引：2

作者：

CHEN, CW ^{[1
]}

IYER, R ^{[1
]}

LEE, HY ^{[1
]}

HAFICH, M ^{[1
]}

ROBINSON, GY ^{[1
]}

LILE, DL ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 19期

关键词：

D O I：

10.1063/1.103981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Insulated-gate metal-insulator-semiconductor (MIS) diodes have been fabricated on multiple quantum well stacks of InP/InGaAs grown by gas-source molecular beam epitaxy. These devices have shown excitonic resonances and optical modulation spectra in pass-through operation similar in shape, but smaller in magnitude, to what has been previously reported with p-i-n and Schottky diode structures. Compared to these other devices the MIS modulator has the advantage of being totally planar with excellent interdevice electrical isolation suggesting its suitability for high complexity array applications.

引用

页码：1964 / 1966

页数：3

共 17 条

[1] ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].

BLEUSE, J ;

BASTARD, G ;

VOISIN, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223

[2] ALGAAS GAAS MULTIPLE QUANTUM WELL REFLECTION MODULATORS GROWN ON SI SUBSTRATES [J].

DOBBELAERE, W ;

HUANG, D ;

UNLU, MS ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :94-96

[3] MOLECULAR-BEAM EPITAXIALLY GROWN SPATIAL LIGHT MODULATORS WITH CHARGE-COUPLED-DEVICE ADDRESSING [J].

GOODHUE, WD ;

BURKE, BE ;

AULL, BF ;

NICHOLS, KB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2356-2360

[4]

GUY DRP, 1989, MAR P TOP C QUANT WE, P202

[5] THE GROWTH AND INSITU CHARACTERIZATION OF CHEMICAL VAPOR-DEPOSITED SIO2 [J].

IYER, R ;

CHANG, RR ;

LILE, DL .

JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) :290-296

[6]

KAN Y, 1987, IEEE J QUANTUM ELECT, V23, P2167

[7]

Lile D. L., 1985, Physics and chemistry of III-V compound semiconductor interfaces, P327

[8] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060

[9] SPATIAL LIGHT MODULATORS USING CHARGE-COUPLED-DEVICE ADDRESSING AND ELECTROABSORPTION EFFECTS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS [J].

NICHOLS, KB ;

BURKE, BE ;

AULL, BF ;

GOODHUE, WD ;

GRAMSTORFF, BF ;

HOYT, CD ;

VERA, A .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1116-1118

[10]

PANISH MB, 1986, PROGR CRYSTAL GROWTH, V123, P1

← 1 2 →