LARGE ULTRAFAST OPTICAL NONLINEARITIES IN AS-RICH GAAS

被引：26

作者：

BENJAMIN, SD ^{[1
]}

OTHONOS, A ^{[1
]}

SMITH, PWE ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT & COMP ENGN,TORONTO M5S 1A4,ON,CANADA

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 20期

关键词：

GALLIUM ARSENIDE; NONLINEAR OPTICS;

D O I：

10.1049/el:19941154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measurement of large ultrafast bandgap-resonant optical nonlinearities in As-rich samples of GaAs that have been grown at low temperatures is reported. Light-induced refractive index changes of magnitude greater than 0.1 and with picosecond response times have been observed. These materials appear to be promising candidates for the fabrication of compact, ultrafast all-optical devices.

引用

页码：1704 / 1706

页数：3

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